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| 2SA2071 Transistor Power transistor (-60V, -3A) 2SA2071 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -3A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -2A, IB = -0.2A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5824 !External dimensions (Units : mm) MPT3 1.5 0.4 1.0 (1) 4.0 2.5 0.5 0.5 (3) 1.5 0.4 (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) 0.4 Each lead has same dimensions Abbreviated symbol : UN !Applications Low Frequency Amplifier High speed switching !Structure PNP Silicon epitaxial planar transistor !Packaging specifications Package Type 2SA2071 Code Basic ordering unit (pieces) Taping T100 1000 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits -60 -60 -6 -3 -6 500 2.0 150 -55~+150 Unit V V V A A 1 mW W 2 C C 1 Pw=100ms 2 Mounted on a 40x40x0.7 (mm) ceramic substrate 1.5 1.6 4.5 3.0 (2) 1/3 2SA2071 Transistor !Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -60 - - V IC= -100A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO -60 - - V IC= -1mA Emitter-base breakdown voltage BVEBO -6 - - V IE= -100A - - -1.0 A VCB= -40V ICBO Collector cut-off current IEBO - - -1.0 A VEB= -4V Emitter cut-off current - -200 -500 mV IC= -2A, IB= -0.2A 1 Collector-emitter saturation voltage VCE (sat) hFE VCE= -2V, IC= -100mA 120 - 390 - DC current gain fT - 180 - MHz VCE= -10V, IE=10mA, f=10MHz Transition frequency Collector output capacitance Cob - 50 - pF VCB= -10V, IE=0mA, f=1MHz Ton - 20 - ns IC= -3A Turn-on time IB1= -300mA Tstg - 150 - ns IB2=300mA Storage time Tf - 20 - ns VCC -25V 2 Fall time 1 Non repetitive pulse 2 See switching charactaristics measurement cicuits 1 !hFE RANK Q 120-270 !Electrical characteristic curves -10 COLLECTOR CURRENT : IC (A) 1000 Ta=25C VCC= -25V IC/IB=10/1 1000 DC CURRENT GAIN : hFE VCE= -2V SWITCHING TIME : (ns) -1 Tstg Tf Ton 100 Ta=125C Ta=25C Ta= -40C 10 -0.1 -0.01 100us 1ms 10ms 100ms DC 100 -0.001 -0.1 -1 -10 -100 10 -0.01 -0.1 -1 -10 1 -0.001 -0.01 -0.1 -1 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current () 1000 Ta=25C -10 IC/IB=10/1 -10 Ta=25C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 100 VCE= -5V VCE= -3V VCE= -2V -1 Ta=125C Ta=25C Ta= -40C -0.1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC CURRENT GAIN : hFE -1 IC/IB=20/1 IC/IB=10/1 -0.1 10 1 -0.001 -0.01 -0.1 -1 -10 -0.01 -0.001 -0.01 -0.1 -1 -10 -0.01 -0.001 -0.01 -0.1 -1 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current () Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current () Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current () 2/3 2SA2071 Transistor IC/IB=10/1 COLLECTOR CURRENT : IC (A) VCE= -2V TRANSITION FREQUENCY : fT (MHz) -10 -10 Ta=125C Ta=25C -1 Ta= -40C 1000 BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) Ta=25C VCE= -10V -1 100 Ta= -40C -0.1 Ta=25C Ta=125C -0.1 10 -0.01 -0.001 -0.01 -0.1 -1 -10 -0.01 0 -0.5 -1 -1.5 1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25C f=1MHz 100 10 1 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance !Switching characteristics measurement circuits RL=8.3 VIN PW IB1 IC IB2 PW 50s DUTY CYCLE 1% VCC -25V IB2 IB1 BASE CURRENT WAVEFORM 90% COLLECTOR CURRENT WAVEFORM IC 10% Ton Tstg Tf 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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